PHYS 434 (2-0-2) Solid State Devices
P-n junction diodes: rectifiers, switching diodes, the breakdown diode, the varactor diode, tunnel diodes, photo-diodes, solar cells and photodetectors, light-emitting diodes, fiber optic communications. Bipolar and field-effect transistors, fabrication and operation, the junction FET, the metal semiconductor FET, the metal-insulator-semiconductor FET. Switching devices, unijunction transistor, four layer (p-n-p-n) devices. Negative conductance microwave devices, impact avalanche transit time (IMPATT) devices, the Read diode, the Gunn effect and related devices. Lasers: stimulated emission, the ruby laser, other laser systems, semiconductor lasers, heterojunction lasers.
Prerequisites: PHYS 303, PHYS 335